Cover image for VLSI technology
Title:
VLSI technology
Author:
Chen, Wai-Kai, 1936-
Publication Information:
Boca Raton : CRC Press, [2003]

©2003
Physical Description:
1 volume (various pagings) : illustrations ; 26 cm.
Language:
English
Added Author:
ISBN:
9780849317385
Format :
Book

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TK7874.75 .V585 2003 Adult Non-Fiction Non-Fiction Area
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Summary

Summary

As their name implies, VLSI systems involve the integration of various component systems. While all of these components systems are rooted in semiconductor manufacturing, they involve a broad range of technologies. This volume of the Principles and Applications of Engineering series examines the technologies associated with VLSI systems, including VLSI processes, semiconductor technology, micromachining, microelectronics packaging, compound semiconductor digital ICs, and multichip modules. Highlights include discussions on relatively recent innovations and progress in areas such as SiGE, SiC, and SOI technologies, noise issues, materials, and logic design.


Table of Contents

1 VLSI Technology: A System PerspectiveKrishna Shenai and Erik A. McShane
1.1 Introductionp. 1
1.2 Contemporary VLSI Systemsp. 2
1.3 Emerging VLSI Systemsp. 14
1.4 Alternative Technologiesp. 17
Referencesp. 19
2 CMOS/BiCMOS TechnologyYasuhiro Katsumata and Tatsuya Ohguro and Kazumi Inoh and Eiji Morifuji and Takashi Yoshitomi and Hideki Kimijima and Hideaki Nii and Toyota Morimoto and Hisayo S. Momose and Kuniyoshi Yoshikawa and Hidemi Ishiuchi and Hiroshi Iwai
2.1 Introductionp. 1
2.2 CMOS Technologyp. 1
2.3 BiCMOS Technologyp. 17
2.4 Future Technologyp. 18
2.5 Summaryp. 22
Referencesp. 22
3 Bipolar TechnologyJan V. Grahn and Mikael Ostling
3.1 Introductionp. 1
3.2 Bipolar Process Designp. 2
3.3 Conventional Bipolar Technologyp. 9
3.4 High-Performance Bipolar Technologyp. 11
3.5 Advanced Bipolar Technologyp. 17
Referencesp. 22
4 Silicon on Insulator TechnologySorin Cristoloveanu
4.1 Introductionp. 1
4.2 Fabrication of SOI Wafersp. 1
4.3 Generic Advantages of SOIp. 4
4.4 SOI Devicesp. 5
4.5 Fully Depleted SOI Transistorsp. 6
4.6 Partially Depleted SOI Transistorsp. 9
4.7 Short-Channel Effectsp. 10
4.8 SOI Challengesp. 11
4.9 Conclusionp. 13
Referencesp. 13
5 SiGe TechnologyJohn D. Cressler
5.1 Introductionp. 1
5.2 SiGe Strained Layer Epitaxyp. 1
5.3 The SiGe Heterojunction Bipolar Transistor (HBT)p. 3
5.4 The SiGe Heterojunction Field Effect Transistor (HFET)p. 8
5.5 Future Directionsp. 10
Acknowledgmentsp. 11
Referencesp. 11
6 SiC TechnologyPhilip G. Neudeck
6.1 Introductionp. 1
6.2 Fundamental SiC Material Propertiesp. 2
6.3 Applications and Benefits of SiC Electronicsp. 4
6.4 SiC Semiconductor Crystal Growthp. 6
6.5 SiC Device Fundamentalsp. 12
6.6 SiC Electronic Devices and Circuitsp. 17
6.7 Further Recommended Readingp. 24
Referencesp. 24
7 Passive ComponentsAshraf Lotfi
7.1 Magnetic Componentsp. 1
7.2 Air Core Inductorsp. 8
7.3 Resistorsp. 9
7.4 Capacitorsp. 11
Referencesp. 11
8 Power IC TechnologiesAkio Nakagawa
8.1 Introductionp. 1
8.2 Intelligent Power ICsp. 2
8.3 High-Voltage Technologyp. 6
8.4 High-Voltage Metal Interconnectionp. 7
8.5 High-Voltage SOI Technologyp. 8
8.6 High-Voltage Output Devicesp. 14
8.7 Sense and Protection Circuitp. 18
8.8 Examples of High-Voltage SOI Power ICs with LIGBT Outputsp. 18
8.9 SOI Power ICs for System Integrationp. 19
8.10 High-Temperature Operation of SOI Power ICsp. 20
Referencesp. 22
9 Noise in VLSI TechnologiesSamuel S. Martin and Thad Gabara and Kwok Ng
9.1 Introductionp. 1
9.2 Microscopic Noisep. 2
9.3 Device Noisep. 6
9.4 Chip Noisep. 10
9.5 Future Trendsp. 17
9.6 Conclusionsp. 19
Referencesp. 19
10 MicromachiningPeter J. Hesketh
10.1 Introductionp. 1
10.2 Micromachining Processesp. 2
10.3 Bulk Micromachining of Siliconp. 2
10.4 Surface Micromachiningp. 15
10.5 Advanced Processingp. 20
10.6 CMOS and MEMS Fabrication Process Integrationp. 25
10.7 Wafer Bondingp. 29
10.8 Optical MEMSp. 30
10.9 Actuators for MEMS Opticsp. 40
10.10 Electronicsp. 41
10.11 Chemical Sensorsp. 51
Referencesp. 58
11 Microelectronics PackagingKrishna Shenai and Pankaj Khandelwal
11.1 Introductionp. 1
11.2 Packaging Hierarchyp. 2
11.3 Package Parametersp. 2
11.4 Packaging Substratesp. 5
11.5 Package Typesp. 6
11.6 Hermetic Packagesp. 10
11.7 Die Attachment Techniquesp. 11
11.8 Package Parasiticsp. 12
11.9 Package Modelingp. 13
11.10 Packaging in Wireless Applicationsp. 13
11.11 Future Trendsp. 14
Referencesp. 14
12 Multichip Module TechnologiesVictor Boyadzhyan and John Choma, Jr.
12.1 Introductionp. 1
12.2 Multi-Chip Module Technologiesp. 2
12.3 Materials for HTCC Aluminum Packagesp. 4
12.4 LTCC Substratesp. 4
12.5 Aluminum Nitridep. 5
12.6 Materials for Multi-Layered AIN Packagesp. 5
12.7 Thin-Film Dielectricsp. 5
12.8 Carrier Substratesp. 5
12.9 Conductor Metallizationp. 6
12.10 Choosing Substrate Technologies and Assembly Techniquesp. 6
12.11 Assembly Techniquesp. 9
12.12 Summaryp. 12
Referencesp. 12
13 Channel Hot Electron Degradation-Delay in MOS Transistors Due to Deuterium AnnealIsik C. Kizilyalli and Karl Hess and Joseph W. Lyding
13.1 Introductionp. 1
13.2 Post-Metal Forming Gas Anneals in Integrated Circuitsp. 2
13.3 Impact of Hot Electron Effects on CMOS Developmentp. 3
13.4 The Hydrogen/Deuterium Isotope Effect and CMOS Manufacturingp. 4
13.5 Summaryp. 12
Acknowledgmentsp. 12
Referencesp. 13
14 MaterialsStephen I. Long
14.1 Introductionp. 1
14.2 Compound Semiconductor Materialsp. 1
14.3 Why III-V Semiconductors?p. 2
14.4 Heterojunctionsp. 3
Referencesp. 5
15 Compound Semiconductor Devices for Digital CircuitsDonald B. Estreich
15.1 Introductionp. 1
15.2 Unifying Principle for Active Devices: Charge Control Principlep. 1
15.3 Comparing Unipolar and Bipolar Transistorsp. 6
15.4 Typical Device Structuresp. 13
Referencesp. 17
16 Logic Design Principles and ExamplesStephen I. Long
16.1 Introductionp. 1
16.2 Static Logic Designp. 1
16.3 Transient Analysis and Design for Very-High-Speed Logicp. 8
Referencesp. 17
17 Logic Design ExamplesCharles E. Chang and Meera Venkataraman and Stephen I. Long
17.1 Design of MESFET and HEMT Logic Circuitsp. 1
17.2 HBT Logic Design Examplesp. 10
Referencesp. 25
Indexp. 1