Epitaxial growth of 6H silicon carbide in the temperature range 1320 ̊to 1390 ̊C
Title:
Epitaxial growth of 6H silicon carbide in the temperature range 1320 ̊to 1390 ̊C
Author:
Will, Herbert A.
Personal Author:
Publication Information:
Washington, D.C. : National Aeronautics and Space Administration ; [Springfield, Va.] : [For sale by the National Technical Information Service], 1974.
Physical Description:
14 pages : illustrations ; 27 cm.
General Note:
Cover title.
Prepared at Lewis Research Center.
Language:
English
Added Author:
Added Corporate Author:
Format :
Book