Cover image for Classical and object-oriented software engineering with UML and C++
Title:
Classical and object-oriented software engineering with UML and C++
Author:
Schach, Stephen R.
Personal Author:
Edition:
Fourth edition.
Publication Information:
Boston : WCB/McGraw-Hill, [1999]

©1999
Physical Description:
xxi, 616 pages : illustrations ; 24 cm
General Note:
Rev. ed. of: Classical and object-oriented software engineering. 3rd ed. c1996.
Language:
English
ISBN:
9780072901689

9780070655232
Format :
Book

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Status
Central Library QA76.758 .S318 1999 Adult Non-Fiction Central Closed Stacks
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Summary

Summary

For professionals involved in large software development projects with thousands or even millions of lines of code, this best-selling guide offers complete coverage of both classic Software Lifecycle -- requirements, specifications, design, implementation, testing, and maintenance -- and the latest Object-Oriented design approaches. Important new issues, such as object patterns and software architecture, are also included.


Summary

The Second Edition of this well respected book is fully updated, making several key improvements in content, organization and pedagogy. The text has also been enhanced by changing notation to standard units of measurement, introducing an "Overview of the MOS Transistor" in the first chapter, and increasing the number of examples. The author has also added a new chapter (10) on CAD models to take advantage of the widespread use of simulation software.


Reviews 1

Choice Review

The metal oxide semiconductor (MOS) transistor takes on a major role in the design and fabrication of modern integrated circuits. This book describes the physics, modeling, and operation of this important semiconductor component with a detailed analytical treatment for senior-level and graduate electrical engineering students as well as for the practicing engineer. Tsividis begins with basic concepts of semiconductors necessary to understand the physics of MOS structures. He then prepares a gradual development toward the complete MOS transistor beginning with a treatment of the relatively simple structure known as the MOS capacitor. Working models useful for the circuit design engineer are then derived in parallel with analytical descriptions of the device physics. The range from simple first order models to more detailed and sophisticated models includes charge sheet models, small geometry effects important in the design of very large scale integrated circuits (VLSI), ion implant modeling, dynamic operation, large and small signal models, high frequency y parameter models, and thermal noise. A concluding chapter covers MOS transistor fabrication techniques. The volume is well written and has numerous problems, suggestions for project work, and many references. Recommended for libraries serving undergraduate and graduate electrical engineering programs.-F.A. Cassara, Polytechnic Institute of New York


Table of Contents

Part I Introduction to Software Engineering
1 The Scope of Software Engineering
2 Software Life-Cycle Models
3 The Software Process
4 Teams
5 The Tools of the Trade
6 Testing
7 From Modules to Objects
8 Reusability and Portability
9 Planning and Estimating
Part II The Workflows of the Software Life Cycle
10 Requirements
11 Classical Analysis
12 Object-Oriented Analysis
13 Design
14 Implementation
15 Postdelivery Maintenance
16 More on UML
Appendix A Term Project: Ophelia's Oasis in the Amlet Desert
Appendix B Software Engineering Resources
Appendix C Requirements Workflow: The Osbert Oglesby Case Study
Appendix D Structured Systems Analysis: The Osbert Oglesby Case Study
Appendix E Analysis Workflow: The Osbert Oglesby Case Study
Appendix F Software Project Management Plan: The Osbert Oglesby Case Study Plan
Appendix G Design Workflow: The Osbert Oglesby Case Study
Appendix H Implementation Workflow: The Osbert Oglesby Case Study (C++ Version)
Appendix I Implementation Workflow: The Osbert Oglesby Case Study (Java Version)
Appendix J Test Workflow: The Osbert Oglesby Case Study
1 Semiconductors, Junctions, and Mosfet Overview
1.1 Introduction
1.2 Semiconductors
1.3 Conduction
1.3.1 Transit Time
1.3.2 Drift
1.3.3 Diffusion
1.4 Contact Potentials
1.5 The pn Junction
1.6 Overview of the MOS Transistor
1.6.1 Basic Structure
1.6.2 A Qualitative Description of MOS Transistor Operations
1.6.3 A Fluid Dynamical Analog
1.6.4 MOS Transistor Characteristics
1.7 A Brief Overview of this Book
2 The Two-Terminal MOS Structure
2.1 Introduction
2.2 The Flat-Band Voltage
2.3 Potential Balance and Charge Balance
2.4 Effect of Gate-Substance Voltage on Surface Condition
2.4.1 Flat-Band Condition
2.4.2 Accumulation
2.4.3 Depletion and Inversion
2.4.4 General Analysis
2.5 Inversion
2.5.1 General Relations and Regions of Inversion
2.5.2 Strong Inversion
2.5.3 Weak Inversion
2.5.4 Moderate Inversion
2.6 Small-Signal Capacitance
2.7 Summary of Properties of the Regions of Inversion
3 The Three-Terminal MOS Structure
3.1 Introduction
3.2 Contacting the Inversion Layer
3.3 The Body Effect
3.4 Regions of Inversion
3.4.1 Approximate Limits
3.4.2 Strong Inversion
3.4.3 Weak Inversion
3.4.4 Moderate Inversion
3.5 A "VCB Control" Point of View
3.5.1 Fundamentals
3.5.2 "Pinchoff" Voltage
3.5.3 Expressions in Terms of the "Pinchoff" Voltage
4 The Four-Terminal MOS Transistor
4.1 Introduction
4.2 Transistor Regions of Operation
4.3 General Charge Sheet Models
4.3.1 Approximate Limits
4.3.2 Simplified Charge Sheet Models
4.3.3 Model Based on Quasi-Fermi Potentials
4.4 Reasons of Inversion in Terms of Terminal Voltages
4.5 Strong Inversion
4.5.1 Complete Symmetric Strong-Inversion Model
4.5.2 Simplified Symmetric Strong-Inversion Model
4.5.3 Simplified, Source-Referenced, Strong-Inversion Model
4.5.4 Model Origin Summary
4.6 Weak Inversion
4.7 Moderate Inversion
4.8 Interpolation Models
4.9 Source-Referenced vs. Body-Referenced Modeling
4.10 Effective Mobility
4.11 Temperature Effects
4.12 Breakdown
4.13 The p-Channel MOS Transistor
4.14 Enhancement-Mode and Depletion-Mode Transistors
4.15 Model Parameter Values, Model Accuracy, and Model Comparison References
5 MOS Transistors and Ion-Implanted Channels
5.1 Introduction
5.2 Enhancement nMOS Transistors
5.2.1 Preliminaries
5.2.2 Charges and Threshold Voltages
5.2.3 Drain-to-Source Current Model for Strong Inversion
5.2.4 Simplified Model for Strong Inversion
5.2.5 Weak Inversion
5.3 Depletion nMOS Transistors
5.3.1 The Need for an n-Type Implant
5.3.2 Charges and Threshold Voltage
5.3.3 Transistor Operation5.4. Enhancement pMOS Transistors
5.4.1 Surface-Channel Enhancement-Mode pMOS
5.4.2 Buried-Channel Enhancement-Mode pMOS
6 Small-Dimension Effectsby D. Antoniadas, Massachuseets Institute of Technology
6.1 Introduction
6.2 Channel Length Modulation
6.3 Barrier Lowering, Two-Dimensional Charge Sharing, and Threshold Voltage
6.3.1 Introduction
6.3.2 Short-Channel Devices
6.3.3 Narrow-Channel Devices
6.3.4 Summary and Comments
6.4 Punchthrough
6.5 Carrier Velocity Syndrome
6.6 Hot Carrier Effects-Substrate Current, Gate Current, and Breakdown
6.7 Scaling
6.8 Effect of Surface and Drain Series Resistances
6.9 Effects Due to Thin Oxides and High Doping
7 The MOS Transistor in Dynamic Operation-Large-Signal Modeling
7.1 Introduction
7.2 Quasi-Static Operation
7.3 Terminal Currents in Quasi-Static Operation
7.4 Evaluation of Charges in Quasi-Static Operation
7.4.1 Introduction
7.4.2 Strong Inversion
7.4.3 Moderate Inversion
7.4.4 Weak Inversion
7.4.5 General Charge Sheet Model
7.4.6 Depletion
7.4.7 Accumulation
7.4.8 Plots of Charges versus VGS
7.4.9 Uses of Charges in Evaluating Terminal Currents
7.5 Transit Time Under DC Conditions
7.6 Limitations of the Quasi-Static Model
7.7 Non-Quasi-Static Modeling
7.7.1 Introduction
7.7.2 The Continuity Equation
7.7.3 Non-Quasi-Static Analysis
8 Small-Signal Modeling for Low and Medium Frequencies
8.1 Introduction
8.2 A Low-Frequency Small-Signal Model for the Intrinsic Part
8.2.1 A Two-Path View
8.2.2

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